Title:
GROUP IV-BASED SEMICONDUCTOR DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE, AND SEMICONDUCTOR HIGH LIGHT-EMITTING MATERIAL
Document Type and Number:
Japanese Patent JPH1146014
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To integrate a light-emitting portion or a light-receiving portion by providing at least one group III-based semiconductor light element material portion made of a mixed crystal layer having silicon and group IV-elements, except silicon as an active region of a silicon substrate. SOLUTION: The surface of a silicon substrate 111 is cleaned, Si and B are simultaneously vapor deposited on the substrate 111, and p<+> -Si layer 112 as p-type electrode layer and p-Si layer 113 as p-type layer are grown. Next, on the substrate, an impurity non-dope i-Si layer 114, an impurity non-dope i-Si0.8 Ge0.2 layer 115, and an impurity non-dope i-Si layer 116 are grown. Moreover, an n-Si layer 117 as an n-type layer and an n<+> -Si layer 118 is grown as an n-side electrode layer. Next, it is processed into a inesa type, and two adjacent p-i-n type diode structures are formed. The one becomes a light- emitting element portion, and the other a light-receiving element portion, and the light-emitting efficiency can be improved higher almost by one digit by using a Si-Ge mixed crystal.
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Inventors:
NAKAGAWA KIYOKAZU
KIMURA YOSHINOBU
MIYAO MASANOBU
KIMURA YOSHINOBU
MIYAO MASANOBU
Application Number:
JP20025997A
Publication Date:
February 16, 1999
Filing Date:
July 25, 1997
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L31/12; H01L33/06; H01L33/16; H01L33/34; H01S5/00; H01S5/026; (IPC1-7): H01L33/00; H01L31/12; H01S3/18
Attorney, Agent or Firm:
Akio Takahashi (1 person outside)