Title:
GROWTH DEVICE FOR COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5913693
Kind Code:
A
Abstract:
PURPOSE:To control the amt. of inert liquid, by providing an auxiliary pulling shaft coaxial with a pulling shaft, attaching a vertically movable mechanism to the auxiliary pulling shaft independently of the pulling shaft, and providing a ladle which ladles up the inert liquid to the forward end of the auxiliary pulling shaft. CONSTITUTION:A growth device for a compd. semiconductor single crystal pulls a compd. crystal of a compd. having high equil. dissociation pressure from a melt 3 contg. said compd. in the state of pressurizing the inside of the device with an inert gas and keeping the melt 3 convered with inert liquid 4. An auxiliary pulling shaft 23 which is coaxial with a pulling shaft 11 holding a seed crystal, a driving mechanism which drives vertically the shaft 23 independently of the shaft 11, and a ladle 21 which is provided to the forward end of the shaft 23 and increases or decreases the amt. of the liquid 4 are provided to said device. Thereupon, an optional amt. of the liquid 4 is removed and the liquid 4 of an adequate layer thickness is set prior to pulling of the single crystal.
Inventors:
KOJIMA MASAKATSU
Application Number:
JP12211882A
Publication Date:
January 24, 1984
Filing Date:
July 15, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C30B27/02; H01L21/208; (IPC1-7): C30B15/00; H01L21/02; H01L21/208
Attorney, Agent or Firm:
Eiji Morota