Title:
GROWTH METHOD OF GALLIUM NITRIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2014152066
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a growth method of a gallium nitride single crystal using a novel melt which can prevent wetting-up of the melt and deterioration of a reaction vessel, and which is not intermingled into a grown GaN single crystal as an impurity.SOLUTION: In a growth method, a melt is obtained by melting a raw material comprising tin, gallium, and one or more kinds of metals selected from a group comprising alkali metals and alkaline earth metals, and the melt and a gas phase containing a nitrogen source as an indispensable are heated in the contact state, to thereby grow a gallium nitride single crystal.
Inventors:
HASEGAWA TOMOHARU
YAMANE HISANORI
YAMANE HISANORI
Application Number:
JP2013022403A
Publication Date:
August 25, 2014
Filing Date:
February 07, 2013
Export Citation:
Assignee:
ASAHI GLASS CO LTD
International Classes:
C30B29/38; C30B9/10; H01L21/208
Attorney, Agent or Firm:
Sumio Tanai
Masatake Shiga
Mitsuyoshi Suzuki
Yanai Noriko
Masatake Shiga
Mitsuyoshi Suzuki
Yanai Noriko
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