Title:
GROWTH OF SELECTIVE SILICON EPITAXIAL FILM
Document Type and Number:
Japanese Patent JP2765622
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent a facet from being formed on the sidewalls of a selective silicon epitaxial film by a method wherein atomic hydrogen is adsorbed to the surface of the silicon epitaxial film by introducing the atomic hydrogen in the silicon epitaxial film along with raw gas and the surface free energy of the silicon epitaxial film is significantly reduced to reduce the crystal face orientation dependence of the free energy.
SOLUTION: When hydrogen gas is made to pass through a W filament 7 heated at a high temperature by a power supply 8 for filament use, 5% or thereabouts of the gas is dissociated into atomic hydrogen. By introducing the atomic hydrogen in a selective silicon epitaxial film even on a growth condition that the temperature of a substrate is high and the flow rate of raw gas is low, a high hydrogen coverage on the surface of the silicon epitaxial film becomes possible like a growth condition that the temperature of the substrate is low and the flow rate of the raw gas is high. Thereby, the crystal face orientation dependence of the surface free energy of the silicon epitaxial film is reduced. As a result, the formation of a facet on the sidesall parts of the film can be inhibited.
Inventors:
SUZUKI TATSUYA
Application Number:
JP21473895A
Publication Date:
June 18, 1998
Filing Date:
August 23, 1995
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
C30B25/14; C30B25/02; H01L21/205; H01L21/76; H01L29/78; (IPC1-7): H01L21/205; C30B25/14; H01L21/76; H01L29/78
Domestic Patent References:
| JP63150915A | ||||
| JP4252023A | ||||
| JP2143420A | ||||
| JP6025225A |
Other References:
電子情報通信学会技術研究報告 Ｖｏｌ．９４ Ｎｏ．３６６ ＰＰ．５７−６２ （１９９４年）
Attorney, Agent or Firm:
Yosuke Goto (2 outside)
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