Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3221929
Kind Code:
B2
Abstract:
PURPOSE: To reduce current consumption and to stably decrease and supply a power supply voltage from outside by using a transistor as a voltage decreasing means and driving the transistor by applying a reference voltage on a prescribed level to the gate of the transistor.
CONSTITUTION: As a voltage decreasing means for decreasing a power supply voltage Vcc to a prescribed internal voltage Vci, a transistor Q connected between the line of the power supply voltage Vcc and the generation node N of the internal voltage Vci is used. By applying a reference voltage Vss on a prescribed level to the gate of the transistor Q, the decreased internal voltage Vci is taken out of the generation node of the internal voltage. In such a constitution, in a semiconductor device with built-in circuit for decreasing a power supply voltage from outside, the current consumption is reduced and the internally decreased voltage is stably supplied. It is desirable that the transistor Q is a depression type N channel transistor.
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Inventors:
Takao Akaogi
Application Number:
JP24802392A
Publication Date:
October 22, 2001
Filing Date:
September 17, 1992
Export Citation:
Assignee:
富士通株式会社
International Classes:
G11C11/407; G11C11/408; G11C16/06; G11C17/00; H03K19/00; (IPC1-7): G11C11/407; G11C16/06
Domestic Patent References:
| JP6419593A | ||||
| JP6423548A |
Attorney, Agent or Firm:
Aoki Akira (3 outside)
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