To improve the dimensional accuracy of a halftone material film pattern of a halftone type phase shift mask manufactured by using a blank having a laminated structure of the halftone material film and a light shielding film.
The halftone type phase shift mask blank 1 having the halftone material film 3 on a transparent substrate 1 and the light shielding film consisting of a metallic film 4 and antireflection film 5 formed on the halftone material film 3 is formed by depositing the light shielding film in such a manner that the film thickness thereof attains a range from 50 to 77 nanometers. As a result, the difference in the film stress before and after the removal of the light shielding film is reduced in manufacturing the halftone type phase shift mask.
MITSUI MASARU
USHIDA MASAO
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