Title:
HALVED PHOTODIODE
Document Type and Number:
Japanese Patent JPH05267706
Kind Code:
A
Abstract:
PURPOSE:To provide a halved photodiode having two photodiodes with a uniform sensitivity even for a long wavelength light. CONSTITUTION:A diffusion region 103, having the conductive type reverse to a substrate 101, is provided on the substrate 101 of the prescribed conductive type, a first photodiode 131 is formed on the diffusion region 103, and a second photodiode 132 is formed on the position other than the diffusion region 103 on the substrate 101. Then, the impurity density profile in the direction of the arrow 111 of the diffusion region 103 and the impurity density profile in the direction of arrow 110 of the substrate 101 under the second photodiode 132 are formed in such a manner that their peaks are formed inside the respective region, and the respective peaks are formed almost at equal position.
Inventors:
Koji Kobayashi
Application Number:
JP6012392A
Publication Date:
October 15, 1993
Filing Date:
March 17, 1992
Export Citation:
Assignee:
NIKON CORPORATION
International Classes:
H01L31/10; H01L31/16; H01S3/00; (IPC1-7): H01L31/10; H01L31/16; H01S3/00