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Title:
HEAT TREATMENT APPARATUS FOR METALLIC SILICON POWDER AND HEAT TREATMENT USING THE APPARATUS
Document Type and Number:
Japanese Patent JPH1150101
Kind Code:
A
Abstract:

To eliminate the reaction between silicon monoxide and a muffle, to prevent the damage of the muffle and to keep the strength of the muffle by using a graphite material for coating the surface of the muffle with silicon carbide film and heat-treating metallic silicon powder at a specific temp. under non-oxidizing atmosphere.

This closed type heat treatment apparatus is constituted by arranging the muffle 3 between heating heaters 2 and trays 5 laid on a sample table 4 in a furnace 1. As a material of the muffle 3, the material coating the surface of the graphite material as the base material with the silicon carbide, is used. As a method for coating the surface of the graphite material with the silicon carbide film, chemical deposition method or chemical gas phase reaction, etc., is recommended. The metallic silicon powder is incorporated into trays 5 and the heating treatment is executed at 1100-1410°C with the heating heaters 2 under the non-oxidizing atmosphere and the reduced pressure at 0.1-30 Torr. The non-oxidizing atmosphere is desirable to be particularly inert gas atmosphere without containing gaseous nitrogen.


Inventors:
FUKUOKA HIROFUMI
WATANABE MAKI
KONYA YOSHIHARU
Application Number:
JP20287997A
Publication Date:
February 23, 1999
Filing Date:
July 29, 1997
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO
International Classes:
B22F1/00; C23C30/00; F27B5/10; (IPC1-7): B22F1/00; C23C30/00; F27B5/10
Attorney, Agent or Firm:
Ryoichi Yamamoto (1 person outside)