To provide a heat treatment method for a silicon wafer by RTP that can suppress slipping by forming a BMD at a high concentration in a bulk while forming a DZ layer by eliminating COP in a wafer surface layer.
In the heat treatment method for a silicon wafer, when a rapid heating/rapid cooling heat treatment is carried out on a wafer obtained by slicing a silicon single-crystal ingot manufactured by a Czochralski method, a temperature raising process includes producing a non-oxidizing gas atmosphere in which a maximum reaching temperature is 1,300°C to a fusion point of silicon and the wafer has its top surface side held in an oxidizing gas atmosphere of 20 to 100% in oxygen partial pressure at the maximum reaching temperature and has its reverse surface side held in the non-oxidizing gas atmosphere, and a temperature falling process includes holding both the top surface side and reverse surface side of the wafer in the non-oxidizing gas atmosphere.
SENDA TAKESHI
TOYODA EIJI
ARAKI KOJI
AOKI TATSUHIKO
SUDO HARUO
SENSAI KOJI
KASHIMA KAZUHIKO
| JP2001308101A | 2001-11-02 | |||
| JP2003056621A | 2003-02-26 | |||
| JP2003115491A | 2003-04-18 | |||
| JP2001102321A | 2001-04-13 | |||
| JP2003533881A | 2003-11-11 | |||
| JP2000031150A | 2000-01-28 | |||
| JP2007534579A | 2007-11-29 | |||
| JP2004228462A | 2004-08-12 | |||
| JP2004214305A | 2004-07-29 | |||
| JPH08255905A | 1996-10-01 |
| WO2005104208A1 | 2005-11-03 |
Rie Ishimura