Title:
HEAT TREATMENT METHOD
Document Type and Number:
Japanese Patent JP2022026758
Kind Code:
A
Abstract:
To provide a heat treatment method capable of stabilizing a temperature in a chamber with high efficiency in a short time.SOLUTION: A heating treatment to a plurality of dummy wafers is performed before a treatment of a semiconductor wafer as a treatment object is performed, and a structure in a chamber such as a susceptor is preheated. Relating to a few dummy wafers of the plurality of dummy wafers from the first, a flash light is irradiated after it is heated to a first heating temperature by a light irradiation from a halogen lamp. Relating to a few dummy wafers which are continued after that, the flush light is irradiated after the heating to a second heating temperature of a temperature lower than the first heating temperature by the light irradiation from the halogen lamp. Since each dummy is heated to the lower temperature after the heating to the high temperature, the temperature of the structure in the chamber can be stabilized with the small number of the dummy wafers in a short time.SELECTED DRAWING: Figure 10
Inventors:
OMORI MAO
FUSE KAZUHIKO
FUSE KAZUHIKO
Application Number:
JP2020130373A
Publication Date:
February 10, 2022
Filing Date:
July 31, 2020
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD
International Classes:
H01L21/26
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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