HEAT TREATMENT OF SEMICONDUCTOR

Title:

HEAT TREATMENT OF SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH0741398

Kind Code:

A

Abstract:

PURPOSE: To provide a method for heat-treating a semiconductor by which the dielectric strength of an insulating oxidized film has been improved using a silicon single crystal produced by the Czochralski method.

CONSTITUTION: A silicon single crystal produced by the Czochralski method is subjected to heat treatment at a high temp. of 1,200-1,400°C and further heat treatment in the temp. range of 850-1,150°C in an arbitrary gaseous atmosphere. This silicon single crystal is preferably subjected to heat treatment. at a high temp. of 1,200-1,400°C, cooling at 1-20°C/min rate in the temp. range of 1,200-1,150°C and further heat treatment, in the temp. range of 850-1,150°C without cooling down to room temp.

Inventors:

IWASAKI TOSHIO
NAKASHIZU TSUNEO
HASEBE MASAMI
KOJIMA KIYOSHI

Application Number:

JP18853793A

Publication Date:

February 10, 1995

Filing Date:

July 29, 1993

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NIPPON STEEL CORP
NITTETSU DENSHI KK

International Classes:

C30B15/00; C30B15/14; C30B29/06; C30B33/02; H01L21/324; (IPC1-7): C30B33/02; C30B15/00; C30B15/14; C30B29/06; H01L21/324

Attorney, Agent or Firm:

Mikio Hatta

Next Patent: HEAT TREATMENT OF SILICON SINGLE CRYSTAL