Title:
HEAT TREATMENT OF ZINC-SELECTION CRYSTAL
Document Type and Number:
Japanese Patent JP3439302
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To inhibit deterioration of crystal properties without generating any deposit within a crystal and to obtain a crystal having low electric resistance by adjusting the cooling rate of the crystal after the heat treatment to a value within a prescribed range, in the heat treatment that comprises subjecting a ZnSe crystal grown by a chemical transport method using iodine as the transport medium, to heat treatment in a Zn vapor atmosphere.
SOLUTION: The cooling rate of a ZnSe crystal after this heat treatment is adjusted to 1 to 200°C/min. In the heat treatment, the ZnSe crystal that is an object of this heat treatment and metal Zn are heated to 800 to 1,100°C and 750 to 1,100°C, respectively so that the temp. difference between them is adjusted to 0 to 50°C and, under such conditions, the ZnSe crystal is subjected to heat treatment desirably for 50 to 200hr. The figure shows a conceptual drawing of a device for performing this heat treatment. In the device, a ZnSe crystal grown by a chemical transport method using iodine as the transport medium is held in a quartz reaction tube by supporting the crystal with a quartz member, and also, metal Zn is received at the bottom of the quartz reaction tube, and then, the quartz reaction tube is evacuated to 3×10-7Torr, and thereafter sealed. Subsequently, the quartz reaction tube is placed in a heat treatment furnace and the crystal area and the bottom area in which the metal Zn is placed are heated to 1,000°C and 980°C, respectively, and then, the ZnSe crystal and the metal Zn are maintained under such respective conditions for 100hr.
Inventors:
Ryu Hirota
Shinsuke Fujiwara
Shinsuke Fujiwara
Application Number:
JP21232996A
Publication Date:
August 25, 2003
Filing Date:
August 12, 1996
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B25/00; C30B31/18; C30B33/00; C30B33/02; C30B29/48; (IPC1-7): C30B29/48; C30B31/18; C30B33/02
Domestic Patent References:
| JP1264990A |
Other References:
Ｔ．Ｋｏｙａｍａ ｅｔ ａｌ．，”ＥＴＣＨ ＰＩＴ ＳＴＵＤＹ ＯＦ ＺｎＳｅ ＳＩＮＧＬＥ ＣＲＹＳＴＡＬ ＧＲＯＷＮ ＢＹ ＴＨＥ ＩＯＤＩＮＥ ＴＲＡＮＳＰＯＲＴ ＭＥＴＨＯＤ，Ｊｏｕｒｎａｌ ｏｆ Ｃｒｙｓｔａｌ Ｇｒｏｗｔｈ，Ｖｏｌ．９６，Ｎｏ．１，Ｍａｙ １９８９，ｐ．２１７−２２０
Attorney, Agent or Firm:
Minoru Nakano
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