Title:
ヘリカル共振器型のプラズマ処理装置
Document Type and Number:
Japanese Patent JP4216243
Kind Code:
B2
Abstract:
Provided is helical resonator plasma processing apparatus (100). The plasma processing apparatus comprises a process chamber (150) having a substrate holder (160) for supporting a substrate (W), a dielectric tube (110) disposed on the process chamber to communicate with the process chamber, a helix coil (120) wounded around the dielectric tube, and an RF power source (128) to supply RF power to the helix coil. The dielectric tube has a double tube shape and comprises an inner tube (112) and an outer tube (114), and a plasma source gas inlet port (116) to supply plasma source gas into a space between the inner tube and the outer tube is disposed in the outer tube. A control electrode (130) to control plasma potential is disposed in the dielectric tube. This plasma processing apparatus provides a uniform plasma density distribution along a radial direction of a wafer, and easy control of the plasma potential in the process chamber.
Inventors:
Kim Daiichi
Shun Matou
Gold country leap
Choi Holy Kei
Shun Matou
Gold country leap
Choi Holy Kei
Application Number:
JP2004320539A
Publication Date:
January 28, 2009
Filing Date:
November 04, 2004
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01L21/3065; H05H1/46; H01J7/24; H01J37/32; H01L21/00; H01L21/205; H05H1/00
Domestic Patent References:
| JP9022796A | ||||
| JP8227800A | ||||
| JP2003249493A |
Attorney, Agent or Firm:
Hatta International Patent Corporation