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Title:
ヘテロアセン誘導体、(テトラハロ)ジアリールチエノチオフェン誘導体及びそれらの製造方法
Document Type and Number:
Japanese Patent JP5169191
Kind Code:
B2
Abstract:

To provide a heteroacene derivative which has excellent oxidation resistance and can form semiconductor active phases by a coating method, to provide an oxidation-resistant organic semiconductor material using the same, and to provide an organic thin film.

This heteroacene derivative is represented by general formula (1), wherein, the substituents R1to R18are each identically or differently H, F, a 1 to 30C alkyl group, a 4 to 30C aryl group, a 2 to 30C alkenyl group, or a 2 to 30C alkynyl group; T1and T2are each identically or differently S, Se, P, B, or Al; (l) and (m) are each an integer of 0 or 1; and (n) and (o) are each an integer of 0 to 2.

COPYRIGHT: (C)2009,JPO&INPIT


Inventors:
Masato Watanabe
Tomoichi Ohashi
Application Number:
JP2007321666A
Publication Date:
March 27, 2013
Filing Date:
December 13, 2007
Export Citation:
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Assignee:
Tosoh Corporation
International Classes:
C07D495/04; C07D495/22; C07F5/02; C07F9/6578; H01L51/05; H01L51/30; H01L51/40; C07B61/00
Domestic Patent References:
JP2008081494A
JP2007197400A
JP2008247853A
JP2007169187A
JP2006312620A
Foreign References:
WO2006109569A1