Title:
HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3150376
Kind Code:
B2
Abstract:
PURPOSE: To obtain an HBT which is able to be easily manufactured and high in speed operation by a method wherein a first conductivity 3c-SiC layer, a second conductivity type Si layer, and a first conductivity type 3C-SiC layer are successively laminated on a first conductivity type semiconductor substrate, where the two 3C-SiC layers serve as a collector region and an emitter region respectively, and the Si layer serves as 2 base region.
CONSTITUTION: A first conductivity 3c-SiC layer 2, a second conductivity type Si layer 3, and a first conductivity type 3C-SiC layer 4 are successively laminated on a first conductivity type semiconductor substrate 1, where the two 3C-SiC layers 2 and 4 serve as a collector region and an emitter region respectively, and the Si layer 3 serves as a base region. An insulating film 5 is formed on the Si substrate 1, a through-hole is provided, and the 3c-SiC layer 2 is formed to fill the through-hole concerned. Then, a second insulating film is formed, a poly-Si film 6 and a third insulating film 7 are formed on the substrate 1, and the through-hole is removed by etching. In succession, the second insulating film located there is removed, and an Si layer 3 and a 3c-SiC layer 4 are formed.
Inventors:
Keita Arai
Application Number:
JP25191891A
Publication Date:
March 26, 2001
Filing Date:
September 30, 1991
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L29/267; H01L21/04; H01L21/331; H01L29/165; H01L29/73; H01L29/737; (IPC1-7): H01L21/331; H01L29/165
Domestic Patent References:
| JP6319869A | ||||
| JP2238631A | ||||
| JP2209833A | ||||
| JP63278321A | ||||
| JP1173642A | ||||
| JP62216364A | ||||
| JP23931A | ||||
| JP6459854A | ||||
| JP6347984A |
Attorney, Agent or Firm:
Sui Kawamura (2 outside)