Title:
HETEROJUNCTION BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JP2001023995
Kind Code:
A
Abstract:
To provide compatibility to both high-speed operation and reliability of an HBT.
An emitter layer 3 is constituted of InGaP or multilayer including InGaP. As a material of a base layer 2, InxGa1-xAs which is composed so that its In-mixture rate x on the emitter layer 3 side becomes lowest and the rate gradually increases toward the collector layer 1 side is used. Since this HBT uses InGaP for its emitter, the layer including As is not exposed, leakage of As is prevented and high reliability can be obtained. In addition, use of InxGa1-xAs gradual variation in composition for the base shortens the base travel time, increasing the operating speed of the HBT.
Inventors:
KOBAYASHI SHINJI
YAGIHARA TAKESHI
OKA SADAJI
MIURA AKIRA
FUJITA TADASHIGE
YAGIHARA TAKESHI
OKA SADAJI
MIURA AKIRA
FUJITA TADASHIGE
Application Number:
JP19193099A
Publication Date:
January 26, 2001
Filing Date:
July 06, 1999
Export Citation:
Assignee:
TERATEC KK
International Classes:
H01L29/73; H01L21/331; H01L29/205; H01L29/737; (IPC1-7): H01L21/331; H01L29/205; H01L29/73
Attorney, Agent or Firm:
Naotaka Ide
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