Title:
非半導体基板内に少なくとも部分的に配置された高Q変圧器
Document Type and Number:
Japanese Patent JP2011530177
Kind Code:
A
Abstract:
An assembly involves an integrated circuit die that is bonded, e.g., flip-chip bonded, to a non-semiconductor substrate by a plurality of low-resistance microbumps. In one novel aspect, at least a part of a novel high-frequency transformer is disposed in the non-semiconductor substrate where the non-semiconductor substrate is the substrate of a ball grid array (BGA) integrated circuit package. At least one of the low-resistance microbumps connects the part of the transformer in the substrate to a circuit in the integrated circuit die. At two gigahertz, the novel transformer has a coupling coefficient k of at least at least 0.4 and also has a transformer quality factor Q of at least ten. The novel transformer structure sees use in coupling differential outputs of a mixer to a single-ended input of a driver amplifier in a transmit chain of an RF transceiver within a cellular telephone.
Inventors:
Tan, Iu
Gin, jean
Gin, jean
Application Number:
JP2011521379A
Publication Date:
December 15, 2011
Filing Date:
August 03, 2009
Export Citation:
Assignee:
QUALCOMM INCORPORATED
International Classes:
H01F17/00; H01F19/00; H01L23/12; H01L25/00
Domestic Patent References:
| JPH06120036A | 1994-04-28 | |||
| JPH07326516A | 1995-12-12 |
Foreign References:
| US20070128821A1 | 2007-06-07 | |||
| US20080130257A1 | 2008-06-05 |
Attorney, Agent or Firm:
Kurata Masatoshi
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori