PURPOSE: To reduce the occupied area of the titled circuit by driving a MOS transistor (TR) driving directly a high voltage load with a signal being the result of amplification to a high voltage level for load from an IC power level signal.

CONSTITUTION: A 1st inverter Inv1 consists of a 1st drive MOS TR Q1 and a 1st high dielectric resistance R1 connected in series and a 2nd inverter Inv2 consists of a 2nd drive MOS TR Q2 and a 2nd high dielectric strength resistor R2 in series. Then the input signal of the IC power level is amplified into a power level for high voltage load once by the 1st inverter Inv1 and a fluorescent display tube D is driven directly by the 2nd inverter Inv2, which is driven by a signal amplified by the 1st inverter Inv1. Thus, even when the gate width of the 2nd inverter Inv2 is considerably narrow, the fluorescent display tube D is driven and the circuit is made small in size.