Title:
HIGH FREQUENCY ION PLATING APPARATUS
Document Type and Number:
Japanese Patent JP3822778
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a high frequency ion plating apparatus which can easily generate and maintain plasma even under vacuum of the low pressure and generate the sufficient self-bias voltage.
SOLUTION: This high frequency ion plating apparatus is constituted so that a vapor deposition material source 10 and a substrate holding rotary electrode 2 are disposed in a vacuum container 1 with the gas of appropriate amount introduced therein, the high frequency power is supplied via a mechanical contact 3, and the ion in the plasma generated in the high frequency discharge space is stuck on a surface of the film on a substrate by the self bias voltage generated between the substrate holding rotary electrode and the film. And an auxiliary electrode 9 for generating plasma is disposed, which is supplied with the high frequency power different from the high frequency power supplied to the substrate holding rotary electrode 2. Two high frequency powers which are respectively supplied to the substrate holding rotary electrode and the auxiliary electrode are used at the different frequency and/or at the different power.
Inventors:
Kanji Fujita
Masahiro Mori
Kaga Kuro
Tashiro Masagen
Masahiro Mori
Kaga Kuro
Tashiro Masagen
Application Number:
JP2000176709A
Publication Date:
September 20, 2006
Filing Date:
June 13, 2000
Export Citation:
Assignee:
Nippon Vacuum Optical Co., Ltd.
International Classes:
C23C14/32; H01J37/32; (IPC1-7): C23C14/32
Domestic Patent References:
| JP55110772A | ||||
| JP61037962A |
Attorney, Agent or Firm:
Shigenobu Oshiro
Masuo Yamada
Fumio Sato
Masuo Yamada
Fumio Sato