Title:
HIGH FREQUENCY LOW-NOISE AMPLIFIER
Document Type and Number:
Japanese Patent JP2017046297
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a high frequency low-noise amplifier, capable of suppressing unwanted oscillation while approaching an impedance to minimize the noise figure and an impedance to maximize the gain.SOLUTION: A high frequency low-noise amplifier includes a circuit board, a first and a second bonding wires, and a field effect transistor. The circuit board includes a ground conductor on its reverse surface, and a first and a second microstrip lines. One-end parts of the microstrip lines are connected to the ground conductor, and the microstrip lines provide inductance. The other-end part of the first microstrip line and a source electrode are connected with a first bonding wire. The other-end part of the second microstrip line and a source electrode are connected with a second bonding wire. A distance between the one-end part and the other-end part of the microstrip line is different from a distance between the one-end part and the other-end part of the second microstrip line.SELECTED DRAWING: Figure 1
Inventors:
TAKAGI KAZUTAKA
Application Number:
JP2015169299A
Publication Date:
March 02, 2017
Filing Date:
August 28, 2015
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H03F3/195; H03F3/60
Domestic Patent References:
JPS61163418U | 1986-10-09 | |||
JP2001284992A | 2001-10-12 | |||
JPH06276038A | 1994-09-30 | |||
JPH01151616U | 1989-10-19 | |||
JPS62203512U | 1987-12-25 |
Foreign References:
WO2001003290A1 | 2001-01-11 |
Attorney, Agent or Firm:
Masahiko Hinataji
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