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Title:
HIGH-FREQUENCY MODULE SUBSTRATE
Document Type and Number:
Japanese Patent JP2004166188
Kind Code:
A
Abstract:

To provide a high-frequency module substrate in which the characteristics of a semiconductor element for high frequency amplification can be adjusted.

The high-frequency module substrate is provided with: a frequency divider circuit DIP01; switch circuits SW01, SW02; a plurality of semiconductor elements AMP011-013, 021-023 for high frequency amplification; and couplers COP01, COP02 for monitoring the outputs of the semiconductor elements for high frequency amplification, capacitors C011-023 are connected between at least one of DC voltage supply bias lines BL011-023 connected to the semiconductor elements for high frequency amplification and a ground and further, inductors L011-L023 are connected between the capacitors C011-023 and the ground. Otherwise, low-capacitance capacitors CL011-CL023 are connected between at least one of the DC voltage supply bias lines BL011-023 and the ground.


Inventors:
FUKUOKA YASUHIKO
IWASAKI SATORU
FUKUYAMA KENTA
Application Number:
JP2003087256A
Publication Date:
June 10, 2004
Filing Date:
March 27, 2003
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
H01P1/00; H04B1/04; (IPC1-7): H04B1/04; H01P1/00
Domestic Patent References:
JP2002232320A2002-08-16
JP2001016053A2001-01-19
JPH11112249A1999-04-23
JP2001156556A2001-06-08
JPH08293746A1996-11-05
JP2000269429A2000-09-29



 
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