Title:
HIGH-FREQUENCY HIGH-OUTPUT TRANSISTOR
Document Type and Number:
Japanese Patent JPS5929432
Kind Code:
A
Abstract:
PURPOSE:To improve high-frequency characteristics while enhancing stability by filling a hole for a small seat for an insulating protective film coating the upper section of a metallized wiring, width thereof is reduced, with a metallic material and joining the material with the metallized wiring while forming a seat for bonding with an external electrode as being protruded to a higher section from the upper surface of the insulating protective film. CONSTITUTION:The width of the metallized wiring 11 formed onto an oxide film 2 is reduced, and floating capacitance is minimized extremely. The surface of a chip 1 is coated with the thick insulating protective film 12 for protecting the metallized film 12. The hole 13 for the small seat is formed to the insulating protective film 12 through etching. The hole 13 is filled with the same metallic material 14 as the metallized wiring 11 and the material is joined, the material is protruded to the higher section from the upper surface of the insulating protective film 12, and the seat 14 for bonding is formed. A metallic small wire 6 is bonded with the seat 14. Accordingly, the width of the metallized wiring 11 is minimized extremely, and floating capacitance by the wiring is reduced.
Inventors:
KOYAMA MASAHARU
Application Number:
JP14086682A
Publication Date:
February 16, 1984
Filing Date:
August 11, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/60; (IPC1-7): H01L21/60
Attorney, Agent or Firm:
Shinichi Kusano