Title:
高周波プラズマ処理方法及び高周波プラズマ処理装置
Document Type and Number:
Japanese Patent JP4024053
Kind Code:
B2
Abstract:
This application discloses the technique of the RF plasma processing using two RF waves of different frequencies, where plasma is generate and retained sufficiently and stably. The first frequency is for generating plasma by igniting a discharge, and the second frequency is for generating self-biasing voltage at a substrate to be processed. The wave of the second frequency is applied with a time-lag after applying the RF wave of the first frequency. This application also discloses the impedance matching technique in the RF plasma processing, where impedance to be provided is optimized both for igniting the discharge and for stabilizing the plasma.
Inventors:
Nobuaki Tsuchiya
Yasumi Sago
Ikeda Makoto
Yasumi Sago
Ikeda Makoto
Application Number:
JP2002033167A
Publication Date:
December 19, 2007
Filing Date:
February 08, 2002
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
H01L21/3065; H05H1/46; B01J19/08; C23C16/505; H01J7/24; H01J37/32; H01L21/205; H01L21/302; H05H1/18
Domestic Patent References:
| JP9064159A | ||||
| JP11274141A | ||||
| JP1106432A | ||||
| JP9260096A | ||||
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Foreign References:
| WO1999011103A1 |
Attorney, Agent or Firm:
Koichi Hotate