To provide a high frequency power amplifier for solving problems in increasing an output by the conventional technology by eliminating heat generation of devices constituting high frequency processing circuits respectively provided for main and subsidiary amplifiers, and for providing a high efficiency characteristics.
The high frequency power amplifier 1 supplies signals of a semi-micro wave band to a micro wave band respectively to a 90 degree hybrid circuit 10 for distributing signals, an FET13 for receiving distributed signals and working as a carrier amplifier, and an FET14 for working as a peak amplifier, combines the signals by a Doherty line 23, converts them by an impedance conversion line 24, and then outputs them. The carrier amplifier contains an input matching circuit 11, an FET13, a phase adjusting line 15, a /4 open stub 16, and an output matching circuit 21. The peak amplifier contains an input matching circuit 12, an FET14, an inductor L, and an output matching circuit 22.
TAKAHASHI HIDENORI
Jun Ishida