Title:
HIGH FREQUENCY SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3430060
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device which can reduce the chip area of a monolithic microwave integrated circuit.
SOLUTION: In a high frequency semiconductor device where a monolithic microwave integrated circuit having a coplanar line is formed, two signal lines 136 and 137 are provided by leaving a prescribed interval and each end of the lines is mutually connected. Further, a ground conductor 100 is provided by leaving the prescribed interval so that it surrounds the outer side of the two signal lines 136 and 137. The two signal lines and the ground conductor thus obtained constitute a folded coplanar line 125. In the folded coplanar line 125, the characteristic impedance of the coplanar line having one straight signal line can be made to be almost equal and the ground conductor on one side of the signal line is omitted. Thus, the signal lines can be integrated with high density.
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Inventors:
Atsushi Yamada
Application Number:
JP4307099A
Publication Date:
July 28, 2003
Filing Date:
February 22, 1999
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01P3/02; H01P5/08; (IPC1-7): H01P3/02; H01P5/08
Domestic Patent References:
| JP1198804A | ||||
| JP7336113A | ||||
| JP61212102A |
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)