Title:
フリップチップ用高性能シリコンコンタクト
Document Type and Number:
Japanese Patent JP4295509
Kind Code:
B2
Abstract:
The present invention provides a semiconductive substrate which includes front and back surfaces and a hole which extends through the substrate and between the front and back surfaces. The hole is defined in part by an interior wall portion and forms an outer conductive sheath. Conductive material is formed proximate at least some of the interior wall portion. Subsequently, a layer of dielectric material is formed within the hole, over and radially inwardly of the conductive material. A second conductive material is then formed within the hole over and radially inwardly of the dielectric material layer. The latter conductive material constitutes an inner conductive coaxial line component.
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Inventors:
Leonard Forbes
Kie Wai.
Kie Wai.
Application Number:
JP2002563532A
Publication Date:
July 15, 2009
Filing Date:
February 01, 2002
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/3205; H01L23/52; H01L21/768; H01L23/12; H01L23/48; H05K1/02; H05K1/11
Domestic Patent References:
| JP11251316A | ||||
| JP64023564A |
Foreign References:
| US6122187 |
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Nobuyuki Kato
Kazuo Abe
Nobuyuki Kato