To provide a high purity silicon carbide heating element having non-staining property and useful as heaters of various devices used in the semiconductor field or the like, required to be strictly kept free from contamination, and a method of producing the same.

The high purity silicon carbide heating element is formed from a silicon carbide sintered compact which is produced by mixing 60 to 80 wt.% high purity α-type silicon carbide powder A having an average particle diameter of ≤100 μm and containing Fe in an amount of ≤10 ppm, 10 to 20 wt.% high purity α-type silicon carbide powder B having an average particle diameter of ≤2 μm and containing Fe in an amount of ≤30 ppm, and 10 to 20 wt.% α-type silicon carbide powder C having an average particle diameter of ≤1 μm and containing Fe in an amount of ≤200 ppm to obtain a silicon carbide mixed powder, then adding water to the silicon carbide mixed powder, kneading, slip casting the resulting slurry to obtain a formed body, firing the formed body under a non-oxidizing atmosphere at 1,800 to 2,200°C, and subjecting the sintered compact to acid treatment to dissolve and remove impurities. It is preferable that the silicon carbide sintered compact contains Fe in an amount of ≤10 ppm, and has physical properties that the electrical specific resistance at room temperature is ≤0.1 Ω.cm and the density is ≥2.5 g/cm3.