Title:
高速応答・高感度乾湿応答センサー
Document Type and Number:
Japanese Patent JP6448007
Kind Code:
B2
Abstract:
The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.
Inventors:
Kawakita Hitoshi
Tadashi Shinohara
Toyohiro Chikyo
Toshihide Ikutame
Akihiko Oi
Tomoko Oki
Tadashi Shinohara
Toyohiro Chikyo
Toshihide Ikutame
Akihiko Oi
Tomoko Oki
Application Number:
JP2016535935A
Publication Date:
January 09, 2019
Filing Date:
July 21, 2015
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
G01N27/26; G01N27/30; G01N27/416
Domestic Patent References:
| JP2007303936A | ||||
| JP2008045876A | ||||
| JP2008096235A | ||||
| JP5002007A | ||||
| JP2011128091A | ||||
| JP2008261691A | ||||
| JP2001349867A | ||||
| JP2006070287A | ||||
| JP2011085516A | ||||
| JP10038843A | ||||
| JP5332964A | ||||
| JP1123140A | ||||
| JP2006317263A |
Foreign References:
| US20110033764 | ||||
Attorney, Agent or Firm:
Shigerou
Toshio Nishizawa
Toshio Nishizawa
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