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Title:
高表面品質GaNウェーハおよびその製造方法
Document Type and Number:
Japanese Patent JP4909374
Kind Code:
B2
Abstract:
A method for producing a high quality wafer comprising Al x Ga y In z N, wherein 0

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Inventors:
Shueping Shu
Robert pee board
Application Number:
JP2009099024A
Publication Date:
April 04, 2012
Filing Date:
April 15, 2009
Export Citation:
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Assignee:
CREE INC.
International Classes:
C30B25/18; B24B37/00; H01L21/304; C09G1/02; C09K3/14; C30B29/38; C30B29/40; C30B33/00; G01Q30/12; H01L21/306; H01L33/00; G01Q60/00
Domestic Patent References:
JP4350505B2
JP2001518870A
JP11162852A
JP7161669A
JP63084872A
JP9045960A
JP11320349A
JP58014536A
JP3115383A
JP11260774A
Attorney, Agent or Firm:
Patent Service Corporation Patent Office Sykes



 
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