Title:
埋設導電層を備えた高電圧トランジスタ
Document Type and Number:
Japanese Patent JP4512459
Kind Code:
B2
Abstract:
P-type drain diffusion regions (18,27) spaced apart from each other, are arranged in a N-well region (12). P-type buried layers (14a-14c) arranged in the N-well region, extend laterally below respective drain diffusion regions, such that current flows laterally through the buried layers during ON state.
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Inventors:
Donald ray disney
Application Number:
JP2004271155A
Publication Date:
July 28, 2010
Filing Date:
September 17, 2004
Export Citation:
Assignee:
Power Integrations, Inc.
International Classes:
H01L29/78; H01L21/336; H01L21/337; H01L21/8234; H01L21/8238; H01L27/092; H01L29/06; H01L29/08; H01L29/808; H01L29/40; H01L29/417
Domestic Patent References:
| JP63314869A | ||||
| JP6120510A | ||||
| JP7007154A | ||||
| JP9266311A |
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Hayashi Zouzo
Hajime Asamura
Hayashi Zouzo