中空構造体の製造方法、及び中空構造体

Title:

中空構造体の製造方法、及び中空構造体

Document Type and Number:

Japanese Patent JP6904814

Kind Code:

B2

Abstract:

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

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Inventors:

Takayuki Tsunoda
Maruyama Ayako
Takahiro Akiyama
Seto Yutaka Tomoto

Application Number:

JP2017129351A

Publication Date:

July 21, 2021

Filing Date:

June 30, 2017

Export Citation:

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Assignee:

Canon Inc

International Classes:

H04R31/00; A61B8/14; B81B3/00; B81C1/00; H01L21/302; H04R19/00

Domestic Patent References:

JP2015115631A
JP2013145802A
JP2014017567A
JP2016072661A
JP2011234061A
JP2014140239A

Foreign References:

WO2013005486A1
WO2016194591A1

Attorney, Agent or Firm:

Takuma Abe
Sogo Kuroiwa

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