Title:
半導体ウェハー表面からフォトレジストをクリーニングし、ストリッピングする方法
Document Type and Number:
Japanese Patent JP4435797
Kind Code:
B2
Abstract:
A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.
Inventors:
Birthin Richard El
Suhan
Suhan
Application Number:
JP2007049786A
Publication Date:
March 24, 2010
Filing Date:
February 28, 2007
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
H01L21/027; H01L21/302; G03F7/42; H01L21/02; H01L21/304; H01L21/3065; H01L21/3213
Domestic Patent References:
| JP3227010A | ||||
| JP2023610A | ||||
| JP7142446A | ||||
| JP2203528A | ||||
| JP7201817A | ||||
| JP5102108A | ||||
| JP7235524A | ||||
| JP2049425A | ||||
| JP6349786A | ||||
| JP5234995A | ||||
| JP6084848A | ||||
| JP6163479A |
Attorney, Agent or Firm:
Yoshihiro Shimizu