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Title:
METHOD FOR ETCHING MULTILAYERED FILM
Document Type and Number:
Japanese Patent JP2016082019
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To enable the removal of a deposit sticking to a surface having a geometry formed by etching.SOLUTION: A method according to an embodiment comprises the steps of: (a) etching an upper magnetic layer by plasma generated in a process chamber, in which the etching of the upper magnetic layer is terminated at a surface of an insulator layer; (b) removing deposits formed on surfaces of a mask and the upper magnetic layer as a result of the etching of the upper magnetic layer by plasma generated in the process chamber; and (c) etching the insulator layer by plasma generated in the process chamber. In the deposit removing step, a pulse-modulated DC voltage as a bias voltage for drawing in ions is applied to a support structure holding an object to be processed while tilting and rotating the support structure.SELECTED DRAWING: Figure 13

Inventors:
NISHIMURA EIICHI
OHATA MITSUTAKA
Application Number:
JP2014210664A
Publication Date:
May 16, 2016
Filing Date:
October 15, 2014
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L43/12; H01L21/3065; H01L21/8246; H01L27/105; H01L43/08; H01L43/10
Domestic Patent References:
JP2011199243A2011-10-06
JP2014067837A2014-04-17
JP2013243307A2013-12-05
JP2011103257A2011-05-26
Foreign References:
WO2014080823A12014-05-30
WO2014080782A12014-05-30
WO2013161769A12013-10-31
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka