Title:
カーボンナノチューブを成長させる方法
Document Type and Number:
Japanese Patent JP7080477
Kind Code:
B2
Abstract:
To provide a method for growing a carbon nanotube at a desired position on a substrate with high accuracy.SOLUTION: A method for growing a carbon nanotube on a substrate according to the present invention comprises the steps of: supplying a silica precursor onto a substrate; irradiating the substrate to which the silica precursor is supplied with focused ion beam (FIB) to form a sheet that is composed of silica based on the silica precursor and has a thickness exceeding 3 nm on the substrate to which the FIB is applied; heat-treating the substrate on which the sheet is formed in an atmosphere containing at least oxygen; and growing a carbon nanotubes on the heat-treated substrate by a chemical vapor deposition method (CVD).SELECTED DRAWING: Figure 1
Inventors:
Yoshihiko Takano
Ryo Matsumoto
Sadoki El Hadi
Ryo Matsumoto
Sadoki El Hadi
Application Number:
JP2018127968A
Publication Date:
June 06, 2022
Filing Date:
July 05, 2018
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
B01J21/08; C01B32/162; B01J35/02; B82Y30/00; B82Y40/00
Domestic Patent References:
| JP2012126113A |
Foreign References:
| WO2005007564A1 | ||||
| US20070104892 |
Other References:
B. LIU et al.,Metal-Catalyst-Free Growth of Single-Walled Carbon Nanotubes,J. Am. Chem. Soc.,2009年01月26日,Vol.131, No.6,p.2082-2083
H. LIU et al.,The growth of single-walled carbon nanotubes on a silica substrate without using a metal catalyst,Carbon,2010年01月,Vol.48, No.1,p.114-122
S. HUANG et al.,Metal-Catalyst-Free Growth of Single-Walled Carbon Nanotubes on Substrates,J. Am. Chem. Soc.,2009年01月26日,Vol.131, No.6,p.2094-2095
H. LIU et al.,The growth of single-walled carbon nanotubes on a silica substrate without using a metal catalyst,Carbon,2010年01月,Vol.48, No.1,p.114-122
S. HUANG et al.,Metal-Catalyst-Free Growth of Single-Walled Carbon Nanotubes on Substrates,J. Am. Chem. Soc.,2009年01月26日,Vol.131, No.6,p.2094-2095