To provide a method for manufacturing a display having an inverse stagger TFT capable of high speed operation while preventing the deviation of a threshold, exhibiting high switching characteristics and presenting display excellent in contrast.

After a gate electrode is formed of a highly heat-resistant material, a layer having a catalyst element for accelerating the crystallization of an amorphous semiconductor film is formed and the amorphous semiconductor film and a layer having a donor element and a rare gas element are formed and heated to crystallize the amorphous semiconductor film and to remove the catalyst element from a crystalline semiconductor film. Subsequently, a semiconductor region is formed using a part of the crystalline semiconductor film, a source electrode and a drain electrode touching the semiconductor region electrically are formed, and a gate interconnect line connected with the gate electrode is formed, thus forming the inverse stagger TFT.

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