Title:
表示装置の作製方法
Document Type and Number:
Japanese Patent JP5311955
Kind Code:
B2
Abstract:
The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.
Inventors:
Shunpei Yamazaki
Jimbo Yasuhiro
Jimbo Yasuhiro
Application Number:
JP2008257711A
Publication Date:
October 09, 2013
Filing Date:
October 02, 2008
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/205; H01L21/28; H01L29/417; H01L29/423; H01L29/49; H01L51/50; H05B33/14
Domestic Patent References:
| JP11177094A |
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