Title:
シリコンカーバイドから宝石を製造するための方法
Document Type and Number:
Japanese Patent JP2014506138
Kind Code:
A
Abstract:
The invention relates to growing and processing monocrystals. Silicon carbide produced by the method of the present invention can be used not only for the electronic industry and jewelry-making but also as glass for watches or watchcase. The method comprises simultaneously growing a plurality of moissanite crystal blanks in a honeycomb mold of molding graphite, separating the blanks into individual crystals, faceting, grinding and polishing the crystals. Prior to faceting, the blanks are glued onto a mandrel with their one side and then-with the reverse side thereof. Polishing is carried out on a ceramic wheel rotating at a rate of 200 to 300 rpm using diamond powder spray with a grain size of 0.125-0.45 µm to ensure that the depth of scratch marks be less than the length of a light wave in the visible part of the spectrum, and the cut and cleaved edges and defective blanks unsuitable for faceting are pulverized and returned to the stage of growing.
Inventors:
Alexander Valelevic Krisin
Yuri Ivanovich Petrov
Victor Anatorevich Tszulkov
Yuri Ivanovich Petrov
Victor Anatorevich Tszulkov
Application Number:
JP2013536555A
Publication Date:
March 13, 2014
Filing Date:
August 18, 2011
Export Citation:
Assignee:
Obestevo S. Ogrannichennoy Otovetostvennostoju "Grannik"
International Classes:
A44C27/00; B24B37/00; B28D5/00
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro