Title:
蓄電装置の作製方法
Document Type and Number:
Japanese Patent JP5885940
Kind Code:
B2
Abstract:
To provide a method for forming an electrode for a storage battery, including the step of: forming a metal layer which is over a current collector and has an edge portion; and forming a crystalline silicon layer, which is over the etched metal layer and includes a silicon whisker, as an active material layer by a low pressure chemical vapor deposition (LPCVD) method in which heating is performed with the use of a deposition gas containing silicon.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2011116719A
Publication Date:
March 16, 2016
Filing Date:
May 25, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01M4/1395; H01G11/06; H01G11/24; H01G11/30; H01G11/66; H01G11/68; H01G11/70; H01G11/86; H01M4/134; H01M4/38; H01M4/62
Domestic Patent References:
| JP2005116509A | ||||
| JP2009099512A | ||||
| JP2010262752A | ||||
| JP201218919A | ||||
| JP2012526364A |
Foreign References:
| US20090042102 |