Title:
抵抗率測定装置の管理方法
Document Type and Number:
Japanese Patent JP7205391
Kind Code:
B2
Abstract:
The present invention pertains to a method for managing a resistivity measurement device by repeatedly measuring, by a four-probe method, resistivity on a measurement surface of a standard sample comprising a silicon monocrystal, the method involving: using a standard sample in which the measurement surface is a plane orthogonal to the center axis of a silicon ingot and which includes, in the in-plane of the measurement surface, an intersection point between the center axis of the silicon ingot and the plane orthogonal to the center axis; arranging four probes for use in the four-probe method such that the array direction thereof is orthogonal to a straight line connecting the intersection point and a measurement position; measuring the resistivity by means of the four-probe method; and rotationally moving the measurement position by a prescribed rotational angle about the intersection point for each measurement. Thus, it is possible to provide a resistivity measurement device management method which can achieve stabilization of repetitive resistivity measurement of a silicon monocrystal which is a standard sample.
Inventors:
Masahiro Yoshida
Mitsuhiro Fukuyama
Kume Fumitaka
Koichi Kanaya
Mitsuhiro Fukuyama
Kume Fumitaka
Koichi Kanaya
Application Number:
JP2019104674A
Publication Date:
January 17, 2023
Filing Date:
June 04, 2019
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/66; G01R27/02
Domestic Patent References:
| JP2011211060A | ||||
| JP2001274211A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi
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