Title:
How to manufacture a length type JFET restriction type silicon carbide power metal-oxide-semiconductor field-effect transistor and a length type JFET restriction type silicon carbide metal oxide semiconductor field effect transistor
Document Type and Number:
Japanese Patent JP6095417
Kind Code:
B2
Abstract:
Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) includes an n-type silicon carbide drift layer (12), a first p-type silicon carbide region (20) adjacent the drift layer and having a first n-type silicon carbide region (24) therein, an oxide layer (28) on the drift layer, and an n-type silicon carbide limiting region (26) disposed between the drift layer and a portion of the first p-type region. The limiting region has a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.
Inventors:
Ryusei Hyun
Application Number:
JP2013044370A
Publication Date:
March 15, 2017
Filing Date:
March 06, 2013
Export Citation:
Assignee:
CREE INC.
International Classes:
H01L29/78; H01L21/04; H01L21/336; H01L29/12; H01L29/08; H01L29/24
Domestic Patent References:
| JP2006511961A | ||||
| JP61150378A | ||||
| JP1117363A |
Foreign References:
| WO2002029900A2 |
Attorney, Agent or Firm:
Asamura patent office