To provide a silicon wafer having a sufficiently ensured denuded zone in the vicinity of the surface of a wafer and having distribution of defects so controlled as to acquire a sufficient gettering effect within a bulk region of the wafer.
This silicon wafer has controlled oxygen precipitate distribution in which the oxygen precipitate concentration profile from the front to the back of surfaces of the silicon wafer on which an active region of a semiconductor element is formed shows a first peak and a second peak at predetermined depth from the front and the back surfaces, the denuded zone is formed before reaching the first peak and the second peak from the front and the back surfaces, and the oxygen precipitate concentration profile is a concave shape in the bulk region between the first peak and the second peak.
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
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