Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
GROUP III NITRIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2018073999
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor element manufacturing method which achieves growing of a group III nitride semiconductor layer having excellent crystallinity on a first group III nitride semiconductor layer having a large In composition.SOLUTION: A group III nitride semiconductor element manufacturing method comprises the steps of: supplying a plasma gasified nitrogen atom-containing gas to a substrate 110 without supplying a hydrogen gas to the substrate and supplying a group III metal-containing organic metal gas to the substrate 110 without plasma gasification to form a first group III nitride semiconductor layer 120 having an In composition X1 within a range of not less than 0.5 and not more than 1.0; subsequently setting a temperature of the substrate 110 at not more than 0°C and less than 500°C to form a second group III nitride semiconductor layer 130 having an In composition X2 within a range of not less than 0 and not more than 0.1 and an Al composition Y2 within a range of not less than 0 and not more than 0.1 similar to the first group III nitride semiconductor layer 120; and subsequently setting the substrate 110 at a temperature higher than a growth temperature of the second group III nitride semiconductor layer 130 to form a third group III nitride semiconductor layer 140.SELECTED DRAWING: Figure 1

More Like This:
JP4805681Epitaxial wafer and manufacturing method of epitaxial wafer
JPH0855848HEATING TREATMENT METHOD OF SILICON OXIDE FILM
Inventors:
HORI MASARU
ODA OSAMU
Application Number:
JP2016212246A
Publication Date:
May 10, 2018
Filing Date:
October 28, 2016
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
UNIV NAGOYA
International Classes:
H01L21/205; H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/812; H01S5/323
Domestic Patent References:
JP2016134613A2016-07-25
JP2001093834A2001-04-06
JP2002261395A2002-09-13
JP2001185495A2001-07-06
JPH0620968A1994-01-28
JP2016134610A2016-07-25
Attorney, Agent or Firm:
Osamu Fujitani
Akinori Isshiki
Tomohiro Sumiya



 
Previous Patent: III Fellows nitride semiconductor element

Next Patent: A device using a structure and it which are used for a piezoelectric element