PURPOSE: To materialize a solid-state image pickup device having high transfer efficiency and low smear characteristic by making contact with the polysilicon electrode being a drive electrode with a wiring material consisting of a high melting point metal, using a silicide film as a shading film.
CONSTITUTION: A polysilicon electrode 22 made in a matrix shape is made of a chain of polysilicon electrodes in a group in longitudinal direction on paper and a polysilicon film 28 and a high melting point metal 29 covering a chain of contact windows. Hereby, the resistance of the polysilicon electrode can be neglected, and the speedup of a solid-state image pickup device becomes possible. What is more, for the wiring material consisting of two layers for lining, the lower layer is a polysilicon film, so the work relation of the polysilicon electrode does not change at all, and the depth of potentials of the vertical CCD part and an accumulation part is the same as the other electrodes and does not change. This matter means that high conversion efficiency especially at low illuminance can be materialized.
OKADA HIROYUKI
MATSUDA YUJI
