PURPOSE: To acquire a transcription line in fidelity to a designed line width of a device by correcting a line width of an x-ray absorber to erase a variation amount of a transcription line width to a desired pattern line width corresponding to film thickness distribution of an x-ray transmitting film.

CONSTITUTION: An x-ray mask structure 1 is provided with an x-ray absorber 11, an x-ray transmitting film 12 which supports the x-ray absorber 11 and a support frame for supporting the x-ray transmitting film 12. A transcription line width L1 of a pattern 4b by an x-ray absorber 4a provided to a part with a minimum film thickness in the x-ray transmitting film 12 is made a designed line width (desired pattern line width) of a pattern. In the process, a line width W2 of the other x-ray absorber 5a is corrected to erase a variation amount to a desired pattern line width L1 of a transcription line width L2 to film thickness distribution (d2>d1) of the x-ray transmitting film 12. That is, a line width (W1>W2) as shown by the Figure is realized. A pattern line width (L1=L2) in fidelity to designed line width can be thereby formed on an exposure substrate 2.