PURPOSE: To obtain an Si-Ge thin film in which crystal defect and dislocation are suppressed by heating a silicon substrate at a constant rate in a group IV based hydrogen gas atmosphere containing silicon, introducing group IV based hydrogen gas containing Ge upon transition through a specific temperature, and then keeping a specific temperature range.

CONSTITUTION: Group IV based hydrogen gas containing silicon is fed into a reaction tube. Surface temperature of a substrate is then risen quickly at an appropriate rate in the range of 50-200°C/sec. When the surface temperature of the substrate reaches an appropriate temperature in the range of 500-600°C, a valve is opened to feed group IV based hydrogen gas containing germanium into the reaction tube. Surface temperature of the substrate is then set in the range of 700-800°C. Consequently, an Si-Ge thin film 204 having the same orientation as the surface of the substrate is grown by about 2000 on the silicon substrate 200.