PURPOSE: To improve performance of a thermoionic element in a compact and thin configuration by embedding a part or the entire of a columnar thermoionic semiconductor material into insulating material such as resin, ceramics and glass.
CONSTITUTION: A plate-shaped or rod-shaped P-type semiconductor material 3 and an N-type thermoionic semiconductor material 4 are cut into a plurality of columnar shapes with a cutting device. Then, the columnar P-type thermoionic semiconductor material 3 and the N-type thermoionic material 4 are made to face. A part of or the entire part of the gap is filled with an insulating material 5 such as resin, ceramics and glass, and the parts are fixed. Then the surfaces of the columnar thermoionic semiconductor material 3 and the N-type thermoionic semiconductor material 4 are exposed. Finally, the P-type thermoionic semiconductor material 3 and the N-type thermoionic semiconductor material 4, a which are exposed on the surface, are connected with the conductive material such as metal. Thus, the P-N junction is formed.
ATAKA TATSUAKI
KUWABARA SEIJI
OKANO HIROSHI
NEMOTO HIROHIKO
