Title:
DETECTING METHOD FOR END POINT OF ETCHING
Document Type and Number:
Japanese Patent JPH07115086
Kind Code:
A
Abstract:
PURPOSE: To make it possible to reliably detect an etching end point of a material to be treated, the surface of which is formed with a silicon nitride film.
CONSTITUTION: A material to be treated A, the surface of which is formed with a silicon nitride film is placed inside a vacuum container 1. A reactive gas is activated in a discharge chamber 7 and then introduced to a vacuum container 1. An active species of the reactive gas is applied to the silicon nitride film and etching-processed. Chemical luminescence radiated from the silicon nitride film is detected through a photoelectric converter 11 and the end point of the etching is detected from the change in output voltage.
Inventors:
KASAI MASARU
Application Number:
JP26113893A
Publication Date:
May 02, 1995
Filing Date:
October 19, 1993
Export Citation:
Assignee:
SHIBAURA ENG WORKS LTD
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00
Attorney, Agent or Firm:
Kazuo Sato (3 others)
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