Title:
【発明の名称】半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP2505065
Kind Code:
B2
Abstract:
A high frequency and high power semiconductor device includes a semiconductor substrate having an active element on the front surface and a radiating metal layer for radiating heat generated by the active element on the rear surface of the substrate. The radiating metal layer is disposed on a part of the rear surface of the substrate directly opposite the active element. Further, a dispersion layer having a linear expansion coefficient equal to that of the substrate material and differing from that of the radiating metal layer is disposed on the rear surface of said semiconductor substrate but not directly opposite the active element.
Inventors:
OZAKI KATSUYA
Application Number:
JP26888290A
Publication Date:
June 05, 1996
Filing Date:
October 04, 1990
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/36; H01L23/12; H01L23/373; H01L23/538; H01L23/66; (IPC1-7): H01L23/36
Attorney, Agent or Firm:
Kenichi Hayase