PURPOSE: To enhance reliability of multilayer wiring structure in the fabrication of semiconductor device featuring formation of protective film for wiring pattern.
CONSTITUTION: In a step for forming silicon oxide 4 or silicon nitride on a plane including wiring patterns 21-23 through bias ECR plasma CVD (ECRCVD), pad part of wiring pattern or power supply wiring part, where the width of level difference is two times or more than the height, is split by making a slit. Passivation can be enhanced by forming silicon oxide or the like through ECRCVD after formation of silicon oxide or silicon nitride through plasma CVD on the wiring pattern. Furthermore, underlying layer can be protected against ECRCVD by forming silicon oxide on the wiring pattern through plasma CVD, forming a PSG film thereon through atmospheric pressure CVD or low pressure CVD, and then forming silicon oxide thereon through ECRCVD.
TOKI MASAHIKO
KIKUCHI HIDEAKI
WATAYA HIROFUMI
