Title:
TREATMENT METHOD FOR GROWTH OF THICK FILM
Document Type and Number:
Japanese Patent JPH0629218
Kind Code:
A
Abstract:
PURPOSE: To prevent the formation of a mechanical connection between materials, semiconductor wafers, for example, and a carrier or a susceptor supporting them at the time of an evaporation or layer-forming processing, an epitaxial processing, for example. CONSTITUTION: At the time of forming a relatively thick film with thickness exceeding about 50 μm, a wafer 14 are connected mechanically to the susceptor 10 which support them, and they are easily damaged owing to thermal stresses during the cooling stage of a work. The rotary speed or the rotating direction of the susceptor 10 which can be rotated is changed suddenly at least once or periodically during the processing. The slight movement of the wafers 14 with respect to the susceptor 10 at the time of the change in this rotation speed or reverse rotation tends to destroy all the connections before they develop strongly, and product yield which can be permitted is considerably improved.
Inventors:
RANSU ARAN SUKADAA
NOOMA RIREI
JIYON EMU SUKARA
NOOMA RIREI
JIYON EMU SUKARA
Application Number:
JP3830793A
Publication Date:
February 04, 1994
Filing Date:
February 26, 1993
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
C23C16/458; H01L21/205; C30B25/12; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)